The SH2102WN is a 650V, 50A fast recovery diode bare die designed for free-wheeling applications in IGBT modules. It features a light punch-through structure, low forward voltage (1.45V typ. at 50A and 25°C), and very fast, soft recovery characteristics. The die measures 3.70mm × 3.70mm on a 200mm wafer with a thickness of 0.07±0.01mm, and is mounted with AlSiCu top metallization and Ti/Ni/Au backside metallization. Operating junction temperature ranges from -40°C to +175°C. It meets RoHS compliance and is not designed for radiation-tolerant applications.
Application: Free Wheeling
For sale of Bare Die, please contact the specifications in our sales office. Currently, we don't sell Bare Die on the internet distributors now.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | SH2102WN |
| Product Name | 650V 50A, FRD Bare Die for IGBT Module |
| TJ | -40 to 175 C (-40 to 347 F) |
