The SG6612WN is a 650V, 50A insulated gate bipolar transistor bare die designed for general inverter, UPS, power conditioner, and welding applications. It features a trench light punch-through structure, a collector-emitter saturation voltage of 1.65V at 25°C, and a short-circuit withstand time of 5μs. The die measures 4.60mm × 4.60mm and is manufactured on a 200mm wafer. It operates with a junction temperature range of -40°C to +175°C and meets RoHS requirements. The device is offered in an unsawn wafer format on foil.
Application: General Inverter, UPS, Power Conditioner, Welding
For sale of Bare Die, please contact the specifications in our sales office. Currently, we don't sell Bare Die on the internet distributors now.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | SG6612WN |
| Product Name | 5µs Short-Circuit Tolerance, 650V 50A, IGBT Bare Die |
| TJ | -40 to 175 C (-40 to 347 F) |
