SCT4062KEHR is an automotive-grade N-channel silicon carbide (SiC) MOSFET in a TO-247N package, rated for 1200 V drain-source voltage and 26 A continuous drain current at 25°C. It has a typi- cal on-resistance of 62 mΩ at 25°C and is AEC-Q101 qualified. The device features fast switching and reverse recovery, with a maximum junction temperature of 175°C and thermal resistance junction-to-case of 0.98 K/W. It is RoHS compliant and requires a gate-source drive voltage of +15 V to +18 V for turn-on. The body diode has a typical forward voltage of 3.3 V at 12 A.
AEC-Q101 qualified automotive grade product. SCT4062KEHR is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.
Advantages of ROHM's 4th Generation SiC MOSFET
This series has about 40% reduction in on-resistance and about 50% reduction in switching loss compared to conventional products. The 15V gate-source voltage makes application design easier.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Transistors |
| Product Number | SCT4062KEHR |
| Product Name | 1200V, 26A, 3-pin?THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive |
| Package Type | TO-247; TO-247N |
