The SCT4045DEHR is an automotive-grade N-channel silicon carbide (SiC) MOSFET in a TO-247N package, designed for high-voltage switching applications. It has a drain-source voltage rating of 750 V, a continuous drain current of 34 A at 25°C, and a typical on-resistance of 45 mΩ at 25°C. The device is qualified to AEC-Q101, features fast switching and reverse recovery, and supports a maximum junction temperature of 175°C. Thermal resistance from junction to case is 0.98 K/W typical. The gate-source voltage must be driven between +15 V and +18 V for turn-on. The package dimensions and thermal performance are optimized for automotive power systems.
AEC-Q101 qualified automotive grade product. SCT4045DEHR is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.
Advantages of ROHM's 4th Generation SiC MOSFET
This series has about 40% reduction in on-resistance and about 50% reduction in switching loss compared to conventional products. The 15V gate-source voltage makes application design easier.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Transistors |
| Product Number | SCT4045DEHR |
| Product Name | 750V, 34A, 3-pin?THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive |
| Package Type | TO-247; TO-247N |
