ROHM Semiconductor GmbH 750V, 34A, 3-pin?THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive SCT4045DEHR

Description
AEC-Q101 qualified automotive grade product. SCT4045DEHR is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed. Advantages of ROHM's 4th Generation SiC MOSFET This series has about 40% reduction in on-resistance and about 50% reduction in switching loss compared to conventional products. The 15V gate-source voltage makes application design easier.
Datasheet
Description
AEC-Q101 qualified automotive grade product. SCT4045DEHR is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed. Advantages of ROHM's 4th Generation SiC MOSFET This series has about 40% reduction in on-resistance and about 50% reduction in switching loss compared to conventional products. The 15V gate-source voltage makes application design easier.
Datasheet

Suppliers

Company
Product
Description
Supplier Links
750V, 34A, 3-pin?THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive - SCT4045DEHR - ROHM Semiconductor GmbH
Willich, Germany
750V, 34A, 3-pin?THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive
SCT4045DEHR
750V, 34A, 3-pin?THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive SCT4045DEHR
AEC-Q101 qualified automotive grade product. SCT4045DEHR is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed. Advantages of ROHM's 4th Generation SiC MOSFET This series has about 40% reduction in on-resistance and about 50% reduction in switching loss compared to conventional products. The 15V gate-source voltage makes application design easier.

AEC-Q101 qualified automotive grade product. SCT4045DEHR is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.
Advantages of ROHM's 4th Generation SiC MOSFET
This series has about 40% reduction in on-resistance and about 50% reduction in switching loss compared to conventional products. The 15V gate-source voltage makes application design easier.

Supplier's Site Datasheet

Technical Specifications

  ROHM Semiconductor GmbH
Product Category Transistors
Product Number SCT4045DEHR
Product Name 750V, 34A, 3-pin?THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive
Package Type TO-247; TO-247N
Unlock Full Specs
to access all available technical data

Similar Products

IGBT - 33772583 - Radwell International
Fuji Electric Corp. of America
Specs
Transistor Type IGBT
View Details
IGBTs - 2156614 - RS Components, Ltd.
Infineon Technologies AG
Specs
Transistor Type IGBT
Package Type TO-247; TO-247
View Details
7 suppliers