The SCT4026DEHR is an automotive-grade N-channel silicon carbide (SiC) MOSFET in a TO-247N package, rated for a drain-source voltage of 750 V and a continuous drain current of 56 A at 25°C. It features a typi-cal on-resistance of 26 mΩ at 25°C and a maximum junction temperature of 175°C. The device is qualified to AEC-Q101 and complies with RoHS standards. Its fast switching speed and low reverse recovery charge of 100 nC make it suitable for high-efficiency power conversion applications. The recommended gate-source drive voltage is +15 V to +18 V for turn-on and 0 V for turn-off.
AEC-Q101 qualified automotive grade product. SCT4026DEHR is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.
Advantages of ROHM's 4th Generation SiC MOSFET
This series has about 40% reduction in on-resistance and about 50% reduction in switching loss compared to conventional products. The 15V gate-source voltage makes application design easier.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Transistors |
| Product Number | SCT4026DEHR |
| Product Name | 750V, 56A, 3-pin?THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive |
| Package Type | TO-247; TO-247N |
