The SCT4018KW7 is a 1200 V, N-channel silicon carbide (SiC) MOSFET in a TO-263-7L surface-mount package, designed for high-efficiency switching applications. It has a typical on-resistance of 18 mΩ at 25 °C and a continuous drain current rating of 75 A at 25 °C, reducing to 53 A at 100 °C. The peak pulsed drain current is 179 A, and the body diode exhibits a reverse recovery time of 12 ns and charge of 252 nC. Thermal resistance from junction to case is 0.43 K/W. The gate-source voltage is rated from -4 V to +21 V DC, with a recommended turn-on voltage of +15 V to +18 V. It is RoHS compliant and packaged in 1000-unit embossed tape reels. The device operates up to a 175 °C junction temperature and meets AEC-Q200.
SCT4018KW7 is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.
Advantages of ROHM's 4th Generation SiC MOSFET
This series has about 40% reduction in on-resistance and about 50% reduction in switching loss compared to conventional products. The 15V gate-source voltage makes application design easier.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Transistors |
| Product Number | SCT4018KW7 |
| Product Name | 1200V, 75A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET |
| Package Type | TO-263; TO-263-7L |
