ROHM Semiconductor USA, LLC 1200V MOSFET Transistor SCT4018KRC15

1200V, 18M, 4-PIN THD, TRENCH-ST Product overview: SCT4018KRC15 from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1200V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SCT4018KRC15 can be used for catalog matching and distributor lookup.

Win Source Part Number: 1353612-SCT4018KRC15
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Temperature Range - Operating: 175°C (TJ)
Fake Threat In the Open Market: 47 pct.
MSL Level: 1 (Unlimited)
Mfr: Rohm Semiconductor
Package: Tube
Product Status: Active
Package / Case: TO-247-4
Supplier Device Package: TO-247-4L
Base Product Number: SCT4018
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 81A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 18V
Rds On (Max) @ Id, Vgs: 23.4mOhm @ 42A, 18V
Vgs(th) (Max) @ Id: 4.8V @ 22.2mA
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 18 V
Vgs (Max): +21V, -4V
Input Capacitance (Ciss) (Max) @ Vds: 4532 pF @ 800 V
Power Dissipation (Max): 312W
Mounting Type: Through Hole
HTSUS: 8541.29.0095
REACH Status: REACH Unaffected
ECCN: EAR99

SiC MOSFET

SiC MOSFET

SiC MOSFET

N-Channel 1200V 81A (Tc) 312W Through Hole TO-247-4L