ROHM Semiconductor GmbH 1200V, 24A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET SCT3105KL

Description
SCT3105KL is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed. Suitable for solar inverters, DC/DC converters, switch mode power supplies, induction heating, motor drives.
Datasheet
Description
SCT3105KL is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed. Suitable for solar inverters, DC/DC converters, switch mode power supplies, induction heating, motor drives.
Datasheet

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1200V, 24A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET - SCT3105KL - ROHM Semiconductor GmbH
Willich, Germany
1200V, 24A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET
SCT3105KL
1200V, 24A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET SCT3105KL
SCT3105KL is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed. Suitable for solar inverters, DC/DC converters, switch mode power supplies, induction heating, motor drives.

SCT3105KL is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed. Suitable for solar inverters, DC/DC converters, switch mode power supplies, induction heating, motor drives.

Supplier's Site Datasheet

Technical Specifications

  ROHM Semiconductor GmbH
Product Category Transistors
Product Number SCT3105KL
Product Name 1200V, 24A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET
Package Type TO-247; TO-247N
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