ROHM Semiconductor GmbH 1200V, 24A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET SCT3105KL

Description
SCT3105KL is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed. Suitable for solar inverters, DC/DC converters, switch mode power supplies, induction heating, motor drives.
Description
SCT3105KL is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed. Suitable for solar inverters, DC/DC converters, switch mode power supplies, induction heating, motor drives.
Datasheet
Datasheet Summary
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The SCT3105KL is a 1200 V N-channel silicon carbide (SiC) MOSFET in a TO-247N package, designed for high-efficiency switching applications such as solar inverters, DC/DC converters, and motor drives. It has a typical on-resistance of 105 mΩ at 25°C and a continuous drain current rating of 24 A at 25°C case temperature. The device supports a maximum junction temperature of 175°C and has a thermal resistance from junction to case of 0.86 to 1.12 K/W. It is RoHS compliant and features fast switching, low gate charge, and reverse recovery performance. The gate-source voltage is rated from -4 V to +22 V DC, with a recommended drive voltage of +18 V.

Datasheet Summary
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The SCT3105KL is a 1200 V N-channel silicon carbide (SiC) MOSFET in a TO-247N package, designed for high-efficiency switching applications such as solar inverters, DC/DC converters, and motor drives. It has a typical on-resistance of 105 mΩ at 25°C and a continuous drain current rating of 24 A at 25°C case temperature. The device supports a maximum junction temperature of 175°C and has a thermal resistance from junction to case of 0.86 to 1.12 K/W. It is RoHS compliant and features fast switching, low gate charge, and reverse recovery performance. The gate-source voltage is rated from -4 V to +22 V DC, with a recommended drive voltage of +18 V.

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1200V, 24A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET - SCT3105KL - ROHM Semiconductor GmbH
Willich, Germany
1200V, 24A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET
SCT3105KL
1200V, 24A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET SCT3105KL
SCT3105KL is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed. Suitable for solar inverters, DC/DC converters, switch mode power supplies, induction heating, motor drives.

SCT3105KL is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed. Suitable for solar inverters, DC/DC converters, switch mode power supplies, induction heating, motor drives.

Supplier's Site Datasheet

Technical Specifications

  ROHM Semiconductor GmbH
Product Category Transistors
Product Number SCT3105KL
Product Name 1200V, 24A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET
Package Type TO-247; TO-247N
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