ROHM Semiconductor GmbH 650V 29A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET SCT3080AW7

Description
SCT3080AW7 is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.
Datasheet
Description
SCT3080AW7 is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.
Datasheet

Suppliers

Company
Product
Description
Supplier Links
650V 29A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET - SCT3080AW7 - ROHM Semiconductor GmbH
Willich, Germany
650V 29A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET
SCT3080AW7
650V 29A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET SCT3080AW7
SCT3080AW7 is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.

SCT3080AW7 is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.

Supplier's Site Datasheet

Technical Specifications

  ROHM Semiconductor GmbH
Product Category Transistors
Product Number SCT3080AW7
Product Name 650V 29A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET
Package Type TO-263; TO-263-7L
Unlock Full Specs
to access all available technical data

Similar Products

MOSFETs - 1219587 - RS Components, Ltd.
RS Components, Ltd.
Specs
Transistor Type MOSFET
Polarity N-Channel
Package Type SOT23; Sot-23
View Details
Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - AIMDQ75R060M1H - AIMDQ75R060M1H - Infineon Technologies AG
Specs
Transistor Type MOSFET
Polarity N-Channel; N
Transistor Technology / Material Silicon carbide
View Details
NPN general-purpose transistor - 2PC4081S-QX - Nexperia B.V.
Specs
Transistor Type BJT
Package Type SOT323; SOT323
View Details
2 suppliers