The SCT3080AW7 is a 650V N-channel silicon carbide (SiC) power MOSFET in a TO-263-7L surface-mount package, designed for high-efficiency switching applications such as solar inverters, DC/DC converters, and motor drives. It has a continuous drain current of 29A at 25°C and 20A at 100°C, with a typical on-resistance of 80mΩ at 25°C. The device supports a maximum junction temperature of 175°C and features low gate charge, fast switching, and minimal reverse recovery losses. Thermal resistance from junction to case is 0.90 to 1.2 K/W. It is RoHS compliant and packaged in embossed tape reels of 1000 units. The gate-source voltage range is −4V to +22V, with a recommended drive voltage of 0V/+18V.
SCT3080AW7 is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Transistors |
| Product Number | SCT3080AW7 |
| Product Name | 650V 29A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET |
| Package Type | TO-263; TO-263-7L |
