ROHM Semiconductor GmbH 650V 29A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET SCT3080AW7

Description
SCT3080AW7 is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.
Datasheet
Description
SCT3080AW7 is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.
Datasheet

Suppliers

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Supplier Links
650V 29A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET - SCT3080AW7 - ROHM Semiconductor GmbH
Willich, Germany
650V 29A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET
SCT3080AW7
650V 29A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET SCT3080AW7
SCT3080AW7 is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.

SCT3080AW7 is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.

Supplier's Site Datasheet

Technical Specifications

  ROHM Semiconductor GmbH
Product Category Transistors
Product Number SCT3080AW7
Product Name 650V 29A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET
Package Type TO-263; TO-263-7L
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