The SCT3060AW7 is a 650 V, N-channel silicon carbide (SiC) power MOSFET in a TO-263-7L surface-mount package. It has a typical on-resistance of 60 mΩ at 25°C and a continuous drain current rating of 38 A at 25°C case temperature. The device supports a maximum junction temperature of 175°C and has a thermal resistance from junction to case of 0.73 to 0.94 K/W. It is RoHS compliant and designed for applications such as solar inverters, DC/DC converters, and motor drives. Gate-source voltage is rated from -4 V to +22 V, with a recommended drive voltage of 0 V to +18 V. The part includes a body diode with a continuous forward current of 38 A and reverse recovery charge of 294 nC under specified conditions.
SCT3060AW7 is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Transistors |
| Product Number | SCT3060AW7 |
| Product Name | 650V 38A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET |
| Package Type | TO-263; TO-263-7L |
