ROHM Semiconductor GmbH 650V 38A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET SCT3060AW7

Description
SCT3060AW7 is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.
Datasheet
Description
SCT3060AW7 is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.
Datasheet

Suppliers

Company
Product
Description
Supplier Links
650V 38A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET - SCT3060AW7 - ROHM Semiconductor GmbH
Willich, Germany
650V 38A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET
SCT3060AW7
650V 38A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET SCT3060AW7
SCT3060AW7 is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.

SCT3060AW7 is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.

Supplier's Site Datasheet

Technical Specifications

  ROHM Semiconductor GmbH
Product Category Transistors
Product Number SCT3060AW7
Product Name 650V 38A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET
Package Type TO-263; TO-263-7L
Unlock Full Specs
to access all available technical data

Similar Products

Discrete Semiconductor Products - Transistors - FETs, MOSFETs - UJ3C065080K3S - Acme Chip Technology Co., Limited
Specs
Transistor Type MOSFET
Package Type TO-247; TO-247-3
View Details
3 suppliers
Transistor - 175624388 - Radwell International
Allen-Bradley / Rockwell Automation
View Details
Hard To Find - 2MBI600VN-120-50 - 1123626-2MBI600VN-120-50 - Win Source Electronics
Specs
Transistor Type IGBT
Package Type SOT3
View Details
2 suppliers