ROHM Semiconductor GmbH 650V 38A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET SCT3060AW7

Description

SCT3060AW7 is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.

ROHM Semiconductor GmbH

Datasheet

Description

SCT3060AW7 is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.

Datasheet

Suppliers

Company

Product

Description

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ROHM Semiconductor GmbH

Willich, Germany

650V 38A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET
SCT3060AW7

650V 38A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET SCT3060AW7

SCT3060AW7 is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.

Supplier's Site

Datasheet

Technical Specifications

	ROHM Semiconductor GmbH
Product Category	Transistors
Product Number	SCT3060AW7
Product Name	650V 38A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET
Package Type	TO-263; TO-263-7L

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