ROHM Semiconductor GmbH 650V, 12A, THD, High Surge Resistance, Silicon-carbide (SiC) SBD SCS312AH

Description
Shorter recovery time, enabling high-speed switching.
  • 650V, 12A, THD, High Surge Resistance, Silicon-carbide (SiC) SBD - SCS312AH - ROHM Semiconductor GmbH
    ROHM Semiconductor GmbH
Datasheet
Description
Shorter recovery time, enabling high-speed switching.
Datasheet

Suppliers

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650V, 12A, THD, High Surge Resistance, Silicon-carbide (SiC) SBD - SCS312AH - ROHM Semiconductor GmbH
ROHM Semiconductor GmbH
Willich, Germany
650V, 12A, THD, High Surge Resistance, Silicon-carbide (SiC) SBD
SCS312AH
650V, 12A, THD, High Surge Resistance, Silicon-carbide (SiC) SBD SCS312AH
Shorter recovery time, enabling high-speed switching.

Shorter recovery time, enabling high-speed switching.

Supplier's Site Datasheet

Technical Specifications

  ROHM Semiconductor GmbH
Product Category Schottky Diodes
Product Number SCS312AH
Product Name 650V, 12A, THD, High Surge Resistance, Silicon-carbide (SiC) SBD
Package TO-220; TO-220ACP_SiC
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