The S2301 is an N-channel SiC power MOSFET Bare Die from ROHM Semiconductor USA, LLC, designed for high-performance applications. It features a maximum drain-source voltage (VDS) of 1200V and a continuous drain current (ID) rating of 40A. The device exhibits a low on-resistance of 80mΩ, which contributes to improved efficiency in power conversion applications. This MOSFET is suitable for various applications, including solar inverters, DC/DC converters, switch mode power supplies, induction heating, and motor drives. It offers fast switching speeds and fast reverse recovery characteristics, making it easy to integrate into high-frequency circuits. The S2301 can also be easily paralleled and is simple to drive, enhancing its versatility in different circuit designs. Engineers considering the S2301 for their projects should note its operational temperature range of -55°C to +175°C and the gate-source voltage range of -6V to 22V. The device is optimized for applications requiring high voltage and current handling capabilities, making it a reliable choice for demanding power electronics applications.
S2301 is an SiC (Silicon Carbide) planar MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.
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| ROHM Semiconductor USA, LLC | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | S2301 |
| Product Name | N-channel SiC power MOSFET Bare Die |
| Transistor Technology / Material | SiC |
| V(BR)DSS | 1200 volts |
| rDS(on) | 0.0800 ohms |
