RTQ025P02HZG is a P-channel MOSFET designed for switching applications, with a drain-source voltage rating of -20V and a continuous drain current of ±2.5A. It is packaged in a TSMT6 surface-mount case and features a maximum on-state resistance of 100mΩ at -4.5V gate-source voltage and -2.5A drain current. The device includes a built-in gate-source protection diode, is RoHS compliant, and is qualified to AEC-Q101. Power dissipation is rated at 1.25W, with an operating junction temperature range of -55°C to +150°C.
RTQ025P02HZG is a MOSFET for switching applications. This is a high-reliability product of automotive grade qualified to AEC-Q101.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | RTQ025P02HZG |
| Product Name | Pch -20V -2.5A Small Signal MOSFET |
| Polarity | P-Channel |
| V(BR)DSS | -20 volts |
| IDSS | -2500 milliamps |
| PD | 1250 milliwatts |
