The RSM002P03 is a P-channel MOSFET designed for switching applications, housed in the VMT3 package. It has a drain-source voltage rating of -30V, a continuous drain current of ±200mA, and a maximum power dissipation of 150mW. The device features a maximum on-resistance of 1.4Ω at -4.5V gate drive and operates with a gate threshold voltage ranging from -1.0V to -2.5V. Its junction temperature range is -55°C to +150°C, and it is RoHS compliant. Thermal resistance from junction to ambient is 833°C/W when mounted on recommended land patterns.
MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobile equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market.
MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobilr equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | RSM002P03 | RSM002P03 |
| Product Name | 4V Drive Pch MOSFET | 4V Drive Pch MOSFET |
| Polarity | P-Channel | P-Channel |
| V(BR)DSS | -30 volts | -30 volts |
| IDSS | -200 milliamps | -200 milliamps |
| PD | 150 milliwatts | 150 milliwatts |
