The RSF015N06 is a 60V N-channel MOSFET designed for low-voltage switching applications with a 4V gate drive. It is packaged in the TUMT3 surface-mount case, with a maximum power dissipation of 0.8W and a continuous drain current of ±1.5A. The device features a built-in gate-source protection diode and has a maximum on-state resistance of 350mΩ at 4.0V gate drive and 1.5A drain current. The junction temperature range is -55°C to +150°C. It meets RoHS compliance and is suited for tape and reel packaging in 3000-piece reels.
MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobile equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market.
MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobilr equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | RSF015N06 | RSF015N06 |
| Product Name | 4V Drive Nch MOSFET | 4V Drive Nch MOSFET |
| Polarity | N-Channel | N-Channel |
| V(BR)DSS | 60 volts | 60 volts |
| IDSS | 1500 milliamps | 1500 milliamps |
| PD | 800 milliwatts | 800 milliwatts |
