ROHM Semiconductor USA, LLC 100V 20A MOSFET Transistor RSD201N10TL

MOSFET N-CH 100V 20A CPT3 Product overview: RSD201N10TL from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 20A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 20A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-RSD201N10TL can be used for catalog matching and distributor lookup.

N-Channel 100V 20A (Tc) 850mW (Ta), 20W (Tc) Surface Mount CPT3

N-Channel 100V 20A (Tc) 850mW (Ta), 20W (Tc) Surface Mount CPT3

N-Channel 100V 20A (Tc) 850mW (Ta), 20W (Tc) Surface Mount CPT3

MOSFET N-CH 100V 20A CPT3

Manufacturer: Rohm Semiconductor
Win Source Part Number: 1092770-RSD201N10TL
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 850mW (Ta), 20W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: CPT3
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 20A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 1mA
Max Gate Charge: 55nC @ 10V
Max Input Capacitance: 2100pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 46 mOhm @ 20A, 10V
Popularity: Medium
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Balance