RQ6E045SN is an N-channel 30V MOSFET rated for ±4.5A continuous drain current, designed for switching applications. It features a built-in gate-source protection diode and low on-resistance of up to 56mΩ at 4.0V gate drive. The device is packaged in the TSMT6 surface-mount package, with a maximum power dissipation of 1.25W and a junction temperature range of -55°C to +150°C. It is RoHS compliant and meets AEC-Q200 qualifications. Thermal resistance from junction to ambient is 100°C/W when mounted on a ceramic board.
RQ6E045SN is the low on - resistance MOSFET, built-in G-S protection diode for switching application.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | RQ6E045SN |
| Product Name | Nch 30V 4.5A Small Signal MOSFET |
| Polarity | N-Channel |
| V(BR)DSS | 30 volts |
| IDSS | 4500 milliamps |
| PD | 1250 milliwatts |
