ROHM Semiconductor GmbH Nch 30V 3.5A Small Signal MOSFET RQ6E035TN

Description
RQ6E035TN is the low on - resistance MOSFET, built-in G-S protection diode for switching application.
Description
RQ6E035TN is the low on - resistance MOSFET, built-in G-S protection diode for switching application.
Datasheet
Datasheet Summary
Powered by GS/AI

RQ6E035TN is an N-channel 30V MOSFET rated for ±3.5A continuous drain current, designed for switching applications. It features a built-in gate-source protection diode and low on-resistance of 54mΩ maximum at 4.5V gate drive. The device is packaged in the TSMT6 surface-mount package, is RoHS compliant, and meets thermal resistance limits of 100°C/W and 132°C/W on ceramic and FR4 boards respectively. It operates from -55°C to +150°C junction temperature and is qualified for automotive applications via AEC-Q200.

Datasheet Summary
Powered by GS/AI

RQ6E035TN is an N-channel 30V MOSFET rated for ±3.5A continuous drain current, designed for switching applications. It features a built-in gate-source protection diode and low on-resistance of 54mΩ maximum at 4.5V gate drive. The device is packaged in the TSMT6 surface-mount package, is RoHS compliant, and meets thermal resistance limits of 100°C/W and 132°C/W on ceramic and FR4 boards respectively. It operates from -55°C to +150°C junction temperature and is qualified for automotive applications via AEC-Q200.

Suppliers

Company
Product
Description
Supplier Links
Nch 30V 3.5A Small Signal MOSFET - RQ6E035TN - ROHM Semiconductor GmbH
Willich, Germany
Nch 30V 3.5A Small Signal MOSFET
RQ6E035TN
Nch 30V 3.5A Small Signal MOSFET RQ6E035TN
RQ6E035TN is the low on - resistance MOSFET, built-in G-S protection diode for switching application.

RQ6E035TN is the low on - resistance MOSFET, built-in G-S protection diode for switching application.

Supplier's Site Datasheet

Technical Specifications

  ROHM Semiconductor GmbH
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number RQ6E035TN
Product Name Nch 30V 3.5A Small Signal MOSFET
Polarity N-Channel
V(BR)DSS 30 volts
IDSS 3500 milliamps
PD 1250 milliwatts
Unlock Full Specs
to access all available technical data