The RQ6E035SP is a P-channel MOSFET designed for switching applications, with a drain-source voltage rating of -30V and a continuous drain current of ±3.5A. It features a maximum on-resistance of 65mΩ at -10V gate-source voltage and includes a built-in gate-source protection diode. The device is packaged in a TSMT6 surface-mount case, measures 2.0mm × 1.6mm, and is RoHS compliant. It supports a maximum junction temperature of 150°C and meets thermal resistance specifications of 100°C/W on a ceramic board and 132°C/W on FR4. The part is rated for operation between -55°C and +150°C and complies with RoHS standards.
RQ6E035SP is the low on - resistance MOSFET, built-in G-S protection diode for switching application.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | RQ6E035SP |
| Product Name | Pch -30V -3.5A Small Signal MOSFET |
| Polarity | P-Channel |
| V(BR)DSS | -30 volts |
| IDSS | -3500 milliamps |
| PD | 1250 milliwatts |
