RQ6A045ZP is a P-channel MOSFET designed for switching applications, with a drain-source voltage rating of -12V and a continuous drain current of ±4.5A. It features a built-in gate-source protection diode and low on-resistance, with a maximum RDS(on) of 35mΩ at -4.5V gate-source voltage and -4.5A drain current. The device is packaged in a TSMT6 surface-mount package, has a power dissipation rating of 1.25W, and operates over a junction temperature range of -55°C to +150°C. It is RoHS compliant and meets AEC-Q200 automotive quality standards.
RQ6A045ZP is the low on - resistance MOSFET, built-in G-S protection diode for switching application.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | RQ6A045ZP |
| Product Name | Pch -12V -4.5A Small Signal MOSFET |
| Polarity | P-Channel |
| V(BR)DSS | -12 volts |
| IDSS | -4500 milliamps |
| PD | 1250 milliwatts |
