RQ5H025TN is an N-channel MOSFET designed for switching applications, with a 45 V drain-source voltage rating and a continuous drain current of ±2.5 A. It features a maximum on-resistance of 130 mΩ at 4.5 V gate-source voltage and 2.5 A drain current, and includes a built-in gate-source protection diode. The device is packaged in a TSMT3 surface-mount package. Power dissipation is rated at 1.0 W under specified conditions, with a junction temperature range of -55 to +150 °C. It meets RoHS compliance and is rated for reflow soldering.
RQ5H025TN is a Small Signal MOSFET featuring low-on resistance and Built-in G-S Protection Diode. It is suitable for switching.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | RQ5H025TN |
| Product Name | Nch 45V 2.5A Small Signal MOSFET |
| Polarity | N-Channel |
| V(BR)DSS | 45 volts |
| IDSS | 2500 milliamps |
| PD | 1000 milliwatts |
