RQ5H020TN is an N-channel 45V 2A small signal MOSFET in a TSMT3 surface-mount package with built-in gate-source protection diode. It has a maximum continuous drain current of ±2.0A, a drain-source on-resistance of up to 180mΩ at 4.5V gate voltage, and a power dissipation rating of 1.0W. The device operates from -55°C to +150°C junction temperature and is RoHS compliant. Thermal resistance is 125°C/W on a ceramic board and 178°C/W on FR4. Total gate charge is up to 4.1nC.
RQ5H020TN is a Small Signal MOSFET featuring low-on resistance and Built-in G-S Protection Diode. It is suitable for switching.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | RQ5H020TN |
| Product Name | Nch 45V 2A Small Signal MOSFET |
| Polarity | N-Channel |
| V(BR)DSS | 45 volts |
| IDSS | 2000 milliamps |
| PD | 1000 milliwatts |
