RQ5E040TN is an N-channel 30V MOSFET designed for switching applications, featuring a built-in gate-source protection diode and low on-resistance. It is housed in a TSMT3 surface-mount package with a continuous drain current rating of ±4.0A and a maximum power dissipation of 1.0W. The device is RoHS compliant and meets AEC-Q200 automotive qualification standards. Its drain-source on-state resistance is specified as 48mΩ maximum at V_GS=4.5V and I_D=4.0A. The operating junction temperature range is -55°C to +150°C.
RQ5E040TN is a Small Signal MOSFET featuring low-on resistance and Built-in G-S Protection Diode. It is suitable for switching.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | RQ5E040TN |
| Product Name | Nch 30V 4A Small Signal MOSFET |
| Polarity | N-Channel |
| V(BR)DSS | 30 volts |
| IDSS | 4000 milliamps |
| PD | 1000 milliwatts |
