The RGWX5TS65DHR is a 650V, 75A Field Stop Trench IGBT with a built-in fast recovery diode, housed in a TO-247N package. It features a low collector-emitter saturation voltage of 1.5V (typical) at 25°C, low switching losses, and operates with a junction temperature range of -40°C to +175°C. The device is AEC-Q101 qualified and RoHS compliant. Maximum power dissipation is 348W at 25°C case temperature. Thermal resistance from junction to case is 0.43°C/W for the IGBT and 0.93°C/W for the diode. The integrated FRD exhibits a reverse recovery time of 92 ns (typical) at 25°C and a peak reverse recovery current of 8.9A under specified conditions.
RGWX5TS65DHR is a IGBT with low collector - emitter saturation voltage, suitable for On & Off Board Chagers, DC-DC Converters, PFC, Industrial Inverter. This product complies AEC-Q101 qualification. The RGW series features high-speed switching, contributing to higher efficiency of applications.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | RGWX5TS65DHR |
| Product Name | High-Speed Fast Switching Type, 650V 40A, FRD Built-in, TO-247N, Field Stop Trench IGBT for Automotive |
| PD | 348000 milliwatts |
