RGWX5TS65D is a 650V, 75A field stop trench IGBT with a built-in fast recovery diode, packaged in a TO-247N case. It features low collector-emitter saturation voltage (1.5V typ. at 25°C), high-speed switching, and soft switching characteristics to reduce losses. The device supports continuous collector current of 75A at 100°C case temperature and dissipates up to 174W at that temperature. Junction temperature operates from -40°C to +175°C. It is RoHS compliant and designed for PFC, solar inverter, UPS, and induction heating applications. Thermal resistance from junction to case is 0.43°C/W for the IGBT and 0.93°C/W for the diode. The IGBT is qualified for inductive load switching and includes reverse bias safe operating area (RBSOA) protection.
RGWX5TS65D is a IGBT with low collector - emitter saturation voltage, suitable for PFC, Solar Inverter, UPS, Welding, IH applications. The RGW series features high-speed switching, contributing to higher efficiency of applications.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | RGWX5TS65D |
| Product Name | High-Speed Fast Switching Type, 650V 75A, FRD Built-in, TO-247N, Field Stop Trench IGBT |
| TJ | -55 to 175 C (-67 to 347 F) |
