RGWSX2TS65D is a 650V, 60A field stop trench IGBT with a built-in fast recovery diode, designed for PFC, solar converters, and mid-to-high switching frequency applications. It is packaged in a TO-247GE case with a power dissipation of 288W at 25°C and 144W at 100°C. The collector-emitter saturation voltage is 1.6V typical at 25°C and 60A, with a junction operating temperature range of -40°C to +175°C. The device is RoHS compliant with Pb-free lead plating and supplied in a tube package with a basic ordering unit of 600 pieces.
RGWSX2TS65D is a IGBT with low collector - emitter saturation voltage, suitable for PFC, Solar converters, Mid to high switching frequency converters. The RGWS series features high-speed switching, contributing to higher efficiency of applications.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | RGWSX2TS65D |
| Product Name | High-Speed Fast Switching Type, 650V 60A, FRD Built-in, TO-247GE, Field Stop Trench IGBT |
| PD | 288000 milliwatts |
