The RGWSX2TS65 is a 650V, 60A field stop trench IGBT in a TO-247GE package, designed for high-efficiency switching applications such as PFC, solar converters, and mid-to-high frequency converters. It features a collector-emitter saturation voltage of 1.6V (typical) at 25°C and 2.0V at 175°C, with a maximum power dissipation of 288W at 25°C and 144W at 100°C. The device operates with a junction temperature range of -40°C to +175°C and has a thermal resistance of 0.52°C/W. It is RoHS compliant and supports high-speed switching with low switching losses. The IGBT is qualified for operation in inductive loads and includes reverse bias safe operating area (RBSOA) protection.
RGWSX2TS65 is a IGBT with low collector - emitter saturation voltage, suitable for PFC, Solar converters, Mid to high switching frequency converters. The RGWS series features high-speed switching, contributing to higher efficiency of applications.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | RGWSX2TS65 |
| Product Name | High-Speed Fast Switching Type, 650V 60A, TO-247GE, Field Stop Trench IGBT |
| PD | 288000 milliwatts |
