RGWS80TS65D is a 650V, 40A field stop trench IGBT with a built-in fast recovery diode, packaged in a TO-247GE case, designed for PFC, solar converters, and mid-to-high switching frequency applications. It has a collector-emitter saturation voltage of 1.6V at 25°C and 2.0V at 175°C, and a maximum power dissipation of 202W at 25°C. The device features low switching losses, high-speed switching, and a junction temperature range of -40°C to +175°C. It is RoHS compliant with lead-free plating.
RGWS80TS65D is a IGBT with low collector - emitter saturation voltage, suitable for PFC, Solar converters, Mid to high switching frequency converters. The RGWS series features high-speed switching, contributing to higher efficiency of applications.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | RGWS80TS65D |
| Product Name | High-Speed Fast Switching Type, 650V 40A, FRD Built-in, TO-247GE, Field Stop Trench IGBT |
| PD | 202000 milliwatts |
