ROHM Semiconductor USA, LLC Single IGBTs RGWS60TS65DGC13

Description
IGBT Trench Field Stop 650V 51A 156W Through Hole TO-247G
Request a Quote Datasheet
Description
IGBT Trench Field Stop 650V 51A 156W Through Hole TO-247G
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single IGBTs - 846-RGWS60TS65DGC13-ND - DigiKey
Thief River Falls, MN, United States
IGBT Trench Field Stop 650V 51A 156W Through Hole TO-247G

IGBT Trench Field Stop 650V 51A 156W Through Hole TO-247G

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - RGWS60TS65DGC13 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
RGWS60TS65DGC13
Discrete Semiconductor Products - Transistors - IGBTs RGWS60TS65DGC13
IGBT TRNCH FIELD 650V 51A TO247G

IGBT TRNCH FIELD 650V 51A TO247G

Supplier's Site

Technical Specifications

  DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number 846-RGWS60TS65DGC13-ND RGWS60TS65DGC13
Product Name Single IGBTs Discrete Semiconductor Products - Transistors - IGBTs
TJ -40 to 175 C (-40 to 347 F) -40 to 175 C (-40 to 347 F)
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Specs
TJ -55 to 175 C (-67 to 347 F)
Package Type TO-247; SOT3; TO-247-3
Features IGBT Trench 600 V 90 A 300 W Through Hole TO-247-3
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