RGWS60TS65D is a 650V, 30A field stop trench IGBT with a built-in fast recovery diode, packaged in a TO-247GE case. It has a collector-emitter saturation voltage of 1.6V at 25°C and 2.0V at 175°C, with a maximum power dissipation of 156W at 25°C and 78W at 100°C. The device operates with a junction temperature range of -40°C to +175°C and meets RoHS compliance. Thermal resistance is 0.96°C/W from junction to case for the IGBT and 2.88°C/W for the diode. Switching losses are 0.45mJ for turn-off and 0.50mJ for turn-on under inductive load at 30A and 400V. Reverse bias safe operating area is specified for 650V, 15V gate voltage, and 100Ω gate resistance. The IGBT features low switching loss and soft switching characteristics. The package is supplied in a tube, with a basic ordering unit of 600 pieces.
RGWS60TS65D is a IGBT with low collector - emitter saturation voltage, suitable for PFC, Solar converters, Mid to high switching frequency converters. The RGWS series features high-speed switching, contributing to higher efficiency of applications.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | RGWS60TS65D |
| Product Name | High-Speed Fast Switching Type, 650V 30A, FRD Built-in, TO-247GE, Field Stop Trench IGBT |
| PD | 156000 milliwatts |
