RGWS00TS65D is a 650V, 50A field stop trench IGBT with a built-in fast recovery diode, designed for PFC, solar converters, and mid to high switching frequency applications. It is packaged in a TO-247GE case and rated for a maximum junction temperature of 175°C. The IGBT has a typical collector-emitter saturation voltage of 1.6V at 25°C and 2.0V at 175°C, with a power dissipation of 245W at 25°C. Built-in FRD features a reverse recovery time of 88 ns and peak recovery current of 5.9 A at 25°C. The device is RoHS compliant and supplied in a tube package, with a basic ordering unit of 600 pieces.
RGWS00TS65D is a IGBT with low collector - emitter saturation voltage, suitable for PFC, Solar converters, Mid to high switching frequency converters. The RGWS series features high-speed switching, contributing to higher efficiency of applications.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | RGWS00TS65D |
| Product Name | High-Speed Fast Switching Type, 650V 50A, FRD Built-in, TO-247GE, Field Stop Trench IGBT |
| PD | 245000 milliwatts |
