ROHM Semiconductor GmbH High-Speed Fast Switching Type, 650V 50A, TO-247GE, Field Stop Trench IGBT RGWS00TS65

Description
RGWS00TS65 is a IGBT with low collector - emitter saturation voltage, suitable for PFC, Solar converters, Mid to high switching frequency converters. The RGWS series features high-speed switching, contributing to higher efficiency of applications.
Description
RGWS00TS65 is a IGBT with low collector - emitter saturation voltage, suitable for PFC, Solar converters, Mid to high switching frequency converters. The RGWS series features high-speed switching, contributing to higher efficiency of applications.
Datasheet
Datasheet Summary
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RGWS00TS65 is a 650V, 50A field stop trench IGBT in a TO-247GE package, designed for PFC, solar converters, and mid- to high-switching-frequency applications. It has a typical collector-emitter saturation voltage of 1.6V at 25°C and 2.0V at 175°C, with a maximum power dissipation of 245W at 25°C case temperature. The device operates with a junction temperature range of -40°C to +175°C and features low switching losses and soft switching characteristics. It is RoHS compliant and packaged in tubes with a basic ordering unit of 600 pieces. Thermal resistance from junction to case is 0.61°C/W. The gate-emitter threshold voltage ranges from 5.0V to 7.0V, and the absolute maximum gate-emitter voltage is ±30V.

Datasheet Summary
Powered by GS/AI

RGWS00TS65 is a 650V, 50A field stop trench IGBT in a TO-247GE package, designed for PFC, solar converters, and mid- to high-switching-frequency applications. It has a typical collector-emitter saturation voltage of 1.6V at 25°C and 2.0V at 175°C, with a maximum power dissipation of 245W at 25°C case temperature. The device operates with a junction temperature range of -40°C to +175°C and features low switching losses and soft switching characteristics. It is RoHS compliant and packaged in tubes with a basic ordering unit of 600 pieces. Thermal resistance from junction to case is 0.61°C/W. The gate-emitter threshold voltage ranges from 5.0V to 7.0V, and the absolute maximum gate-emitter voltage is ±30V.

Suppliers

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Willich, Germany
High-Speed Fast Switching Type, 650V 50A, TO-247GE, Field Stop Trench IGBT
RGWS00TS65
High-Speed Fast Switching Type, 650V 50A, TO-247GE, Field Stop Trench IGBT RGWS00TS65
RGWS00TS65 is a IGBT with low collector - emitter saturation voltage, suitable for PFC, Solar converters, Mid to high switching frequency converters. The RGWS series features high-speed switching, contributing to higher efficiency of applications.

RGWS00TS65 is a IGBT with low collector - emitter saturation voltage, suitable for PFC, Solar converters, Mid to high switching frequency converters. The RGWS series features high-speed switching, contributing to higher efficiency of applications.

Supplier's Site Datasheet

Technical Specifications

  ROHM Semiconductor GmbH
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number RGWS00TS65
Product Name High-Speed Fast Switching Type, 650V 50A, TO-247GE, Field Stop Trench IGBT
PD 245000 milliwatts
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