The RGW80TS65EHR is a 650V, 40A field stop trench IGBT with a built-in fast recovery diode, housed in a TO-247N package. It is AEC-Q101 qualified for automotive applications and features low collector-emitter saturation voltage (1.5V typical at 25°C), low switching losses, and soft switching characteristics. The device supports continuous collector current of 40A at 100°C and has a maximum power dissipation of 214W at 25°C. The integrated FRD exhibits soft reverse recovery with a peak recovery current of up to 9.7A and reverse recovery charge of 0.83μC at 175°C. Operating junction temperature ranges from -40°C to +175°C.
RGW80TS65EHR is a IGBT with low collector - emitter saturation voltage, suitable for On & Off Board Chagers, DC-DC Converters, PFC, Industrial Inverter. This product complies AEC-Q101 qualification. The RGW series features high-speed switching, contributing to higher efficiency of applications.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | RGW80TS65EHR |
| Product Name | High-Speed Fast Switching Type, 650V 40A, FRD Built-in, TO-247N, Field Stop Trench IGBT for Automotive |
| PD | 214000 milliwatts |
