The RGW80TS65DHR is a 650V, 40A Field Stop Trench IGBT with a built-in fast recovery diode, packaged in a TO-247N case. It is qualified to AEC-Q101 for automotive use and features low collector-emitter saturation voltage (1.5V typ. at 25°C) and low switching losses. The device supports continuous collector current of 40A at 100°C and has a maximum power dissipation of 214W at 25°C. Operating junction temperature ranges from -40°C to +175°C. It is RoHS compliant and uses lead-free plating.
RGW80TS65DHR is a IGBT with low collector - emitter saturation voltage, suitable for On & Off Board Chagers, DC-DC Converters, PFC, Industrial Inverter. This product complies AEC-Q101 qualification. The RGW series features high-speed switching, contributing to higher efficiency of applications.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | RGW80TS65DHR |
| Product Name | High-Speed Fast Switching Type, 650V 40A, FRD Built-in, TO-247N, Field Stop Trench IGBT for Automotive |
| PD | 214000 milliwatts |
