ROHM Semiconductor GmbH High-Speed Fast Switching Type, 650V 40A, FRD Built-in, TO-247N, Field Stop Trench IGBT RGW80TS65D

RGW80TS65D is a 650V, 40A field stop trench IGBT with a built-in fast recovery diode, designed for high-speed switching applications such as PFC, solar inverters, UPS, welding, and IH. It is packaged in a TO-247N case and operates with a junction temperature range of -40°C to +175°C. The IGBT has a collector-emitter saturation voltage of 1.5V at 25°C and 1.85V at 175°C, with a power dissipation of 214W at 25°C and 107W at 100°C. Thermal resistance from junction to case is 0.70°C/W for the IGBT and 1.62°C/W for the diode. The device is RoHS compliant and features low switching loss and soft switching characteristics.