RGW80TS65 is a 650V, 40A field stop trench IGBT in a TO-247N package, designed for high-speed switching in PFC, solar inverter, UPS, welding, and IH applications. It features a collector-emitter saturation voltage of 1.5V at 25°C and 1.85V at 175°C, with a maximum power dissipation of 107W at 100°C and a thermal resistance from junction to case of 0.70°C/W. The device operates within a junction temperature range of -40°C to +175°C and is RoHS compliant. It has a gate-emitter threshold voltage of 5.0V to 7.0V, and total gate charge of 110nC at 400V collector-emitter voltage.
RGW80TS65 is a high speed switching IGBT, suitable for PFC, Solar Inverter, UPS, Welding, IH applications.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | RGW80TS65 |
| Product Name | High-Speed Fast Switching Type, 650V 40A, TO-247N, Field Stop Trench IGBT |
| TJ | -55 to 175 C (-67 to 347 F) |