ROHM Semiconductor GmbH High-Speed Fast Switching Type, 650V 40A, FRD Built-in, TO-3PFM, Field Stop Trench IGBT RGW80TK65E

RGW80TK65E is a 650V, 40A field stop trench IGBT with a built-in fast recovery diode, housed in a TO-3PFM package. It features a collector-emitter saturation voltage of 1.5V at 40A and 1.85V at 175°C, a continuous collector current rating of 23A at 100°C, and a maximum power dissipation of 40W at 100°C. The device has a junction temperature range of -40°C to +175°C and meets RoHS compliance. Thermal resistance from junction to case is 1.85°C/W for the IGBT and 1.83°C/W for the diode. It supports reverse bias safe operating area under inductive load conditions with gate-emitter voltage of 15V and junction temperature up to 175°C.