IGBT Trench Field Stop 650V 39A 81W Through Hole TO-3PFM
IGBT, SINGLE, 650V, 39A, TO-3PFM; DC Collector Current:39A; Collector Emitter Saturation Voltage Vce(on):1.5V; Power Dissipation Pd:81W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-3PFM; No. of Pins:3Pins; RoHS Compliant: Yes
IGBT TRNCH FIELD 650V 39A TO3PFM
IGBT Transistors 650V 40A TO-3PFM Field Stp Trnch IGBT
| DigiKey | Newark, An Avnet Company | Acme Chip Technology Co., Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | RGW80TK65DGVC11-ND | 65AC4005 | RGW80TK65DGVC11 | RGW80TK65DGVC11 |
| Product Name | Single IGBTs | Igbt, Single, 650V, 39A, To-3Pfm; Dc Collector Current Rohm | Discrete Semiconductor Products - Transistors - IGBTs | IGBT Transistors |
| TJ | -40 to 175 C (-40 to 347 F) |
