ROHM Semiconductor GmbH High-Speed Fast Switching Type, 650V 40A, FRD Built-in, TO-3PFM, Field Stop Trench IGBT RGW80TK65D

RGW80TK65D is a 650V, 40A field stop trench IGBT with a built-in fast recovery diode, packaged in a TO-3PFM case for use in PFC, solar inverter, UPS, welding, and induction heating applications. It is rated for a continuous collector current of 23A at 100°C and has a collector-emitter saturation voltage of 1.5V at 40A and 25°C. The device supports a maximum junction temperature of 175°C and has a thermal resistance from junction to case of 1.85°C/W for the IGBT and 2.79°C/W for the diode. The part is RoHS compliant and features low switching losses and soft switching characteristics. It is supplied in a tube packaging format with a basic ordering unit of 450 pieces.