RGW60TS65EHR is a 650V, 30A field stop trench IGBT with a built-in fast recovery diode, designed for automotive applications such as on-board and off-board chargers, DC-DC converters, PFC, and industrial inverters. It is packaged in a TO-247N case and is AEC-Q101 qualified. The IGBT has a typical collector-emitter saturation voltage of 1.5V at 25°C and 1.85V at 175°C, with a maximum power dissipation of 178W at 25°C and 89W at 100°C. The built-in FRD exhibits a reverse recovery time of 81ns at 25°C and 146ns at 175°C. The operating junction temperature range is -40°C to +175°C. The device is RoHS compliant and features low switching losses and soft switching characteristics.
RGW60TS65EHR is a IGBT with low collector - emitter saturation voltage, suitable for On & Off Board Chagers, DC-DC Converters, PFC, Industrial Inverter. This product complies AEC-Q101 qualification. The RGW series features high-speed switching, contributing to higher efficiency of applications.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | RGW60TS65EHR |
| Product Name | High-Speed Fast Switching Type, 650V 30A, FRD Built-in, TO-247N, Field Stop Trench IGBT for Automotive |
| PD | 178000 milliwatts |
