The RGW60TS65DHRC11 is a 650V, 30A field stop trench IGBT with a built-in fast recovery diode, packaged in a TO-247N case. It features a collector-emitter saturation voltage of 1.5V at 25°C and a maximum power dissipation of 178W. The device is AEC-Q101 qualified, RoHS compliant, and operates with a junction temperature range of -40°C to +175°C. Thermal resistance from junction to case is 0.84°C/W for the IGBT and 1.62°C/W for the diode. Switching losses are low, with turn-off energy at 0.24mJ at 25°C and 0.33mJ at 175°C. Reverse recovery charge for the integrated diode is 0.27μC at 25°C and 0.51μC at 175°C.
RGW60TS65DHR is a IGBT with low collector - emitter saturation voltage, suitable for On & Off Board Chagers, DC-DC Converters, PFC, Industrial Inverter. This product complies AEC-Q101 qualification. The RGW series features high-speed switching, contributing to higher efficiency of applications.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | RGW60TS65DHR |
| Product Name | High-Speed Fast Switching Type, 650V 30A, FRD Built-in, TO-247N, Field Stop Trench IGBT for Automotive |
| PD | 178000 milliwatts |
