RGW60TS65D is a 650V, 30A field stop trench IGBT with a built-in fast recovery diode, packaged in a TO-247N case. It features low collector-emitter saturation voltage (1.5V typ at 25°C), high-speed switching, and low switching losses. The device is rated for a maximum junction temperature of 175°C and has a power dissipation of 178W at 25°C case temperature. It is RoHS compliant and designed for PFC, solar inverter, UPS, welding, and induction heating applications. Thermal resistance from junction to case is 0.84°C/W for the IGBT and 1.62°C/W for the diode.
RGW60TS65D is a high speed switching IGBT, suitable for PFC, Solar Inverter, UPS, Welding, IH applications.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | RGW60TS65D |
| Product Name | High-Speed Fast Switching Type, 650V 30A, FRD Built-in, TO-247N, Field Stop Trench IGBT |
| TJ | -55 to 175 C (-67 to 347 F) |
