IGBT Trench Field Stop 650V 33A 72W Through Hole TO-3PFM
IGBT Transistors 650V 30A TO-3PFM Field Stp Trnch IGBT
IGBT TRNCH FIELD 650V 33A TO3PFM
IGBT, SINGLE, 650V, 33A, TO-3PFM; DC Collector Current:33A; Collector Emitter Saturation Voltage Vce(on):1.5V; Power Dissipation Pd:72W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-3PFM; No. of Pins:3Pins; RoHS Compliant: Yes
| DigiKey | VAST STOCK CO., LIMITED | Acme Chip Technology Co., Limited | Newark, An Avnet Company | |
|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | RGW60TK65DGVC11-ND | RGW60TK65DGVC11 | RGW60TK65DGVC11 | 65AC4001 |
| Product Name | Single IGBTs | IGBT Transistors | Discrete Semiconductor Products - Transistors - IGBTs | Igbt, Single, 650V, 33A, To-3Pfm; Dc Collector Current Rohm |
| TJ | -40 to 175 C (-40 to 347 F) |
