RGW60TK65D is a 650V, 30A field stop trench IGBT with a built-in fast recovery diode, designed for PFC, solar inverter, UPS, welding, and IH applications. It is packaged in a TO-3PFM case and rated for a maximum collector current of 20A at 100℃ and a power dissipation of 72W at 25℃. The collector-emitter saturation voltage is 1.5V at 30A and 25℃, with a gate-emitter threshold voltage of 5.0V to 7.0V. The device operates over a junction temperature range of -40℃ to +175℃ and is RoHS compliant. Thermal resistance from junction to case is 2.07°C/W for the IGBT and 2.79°C/W for the diode.
RGW60TK65D is a high speed switching IGBT, suitable for PFC, Solar Inverter, UPS, Welding, IH applications.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | RGW60TK65D |
| Product Name | High-Speed Fast Switching Type, 650V 30A, FRD Built-in, TO-3PFM, Field Stop Trench IGBT |
| TJ | -55 to 175 C (-67 to 347 F) |
