The RGW50TS65D is a high-speed, fast-switching IGBT with a collector-emitter voltage rating of 650V and a continuous collector current rating of 25A at 100¬8C. It features a low collector-emitter saturation voltage of 1.5V, which contributes to reduced conduction losses. The device has a maximum power dissipation of 156W and includes a built-in very fast and soft recovery diode (FRD), enhancing its performance in applications requiring efficient switching. The IGBT is packaged in a TO-247N format and is suitable for various applications, including power factor correction (PFC), solar inverters, uninterruptible power supplies (UPS), welding, and induction heating (IH). It operates within a temperature range of -40 to +175¬8C and is compliant with RoHS standards, featuring Pb-free lead plating. The device is designed to optimize the trade-off between conduction loss and switching speed, making it a viable option for engineers looking for reliable performance in high-efficiency applications.
The RGW50TS65D is a fast switching speed IGBT, suitable for PFC, solar inverter, UPS, welding and IH. The RGTV/RGW series is a highly efficient series that is optimized the trade-off relationship between conduction loss and switching speed. In addition, optimizing the internal design allowed to achieve smooth switching characteristics that decrease voltage overshoot. It contributes to reduce the number of parts required along with design load.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | RGW50TS65D |
| Product Name | High-Speed Fast Switching Type, 650V 25A, FRD Built-in, TO-247N, Field Stop Trench IGBT |
| TJ | -55 to 175 C (-67 to 347 F) |
