RGW50TK65D is a 650V, 18A (at 100°C) Field Stop Trench IGBT with a built-in fast recovery diode, packaged in a TO-3PFM case. It features low collector-emitter saturation voltage (1.5V typ. at 25°C), high-speed switching, and low switching losses. The device supports an operating junction temperature range of -40°C to +175°C, has a maximum power dissipation of 67W at 25°C, and meets RoHS compliance. Thermal resistance is 2.24°C/W (IGBT junction-to-case). It is suitable for PFC, solar inverters, UPS, and induction heating applications.
RGW50TK65D is a high speed switching IGBT, suitable for PFC, Solar Inverter, UPS, Welding, IH applications.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | RGW50TK65D |
| Product Name | High-Speed Fast Switching Type, 650V 18A, FRD Built-in, TO-3PFM, Field Stop Trench IGBT |
| TJ | -55 to 175 C (-67 to 347 F) |
