The RGW40TS65D is a 650V, 20A field stop trench IGBT with a built-in fast soft-recovery diode, packaged in a TO-247N case. It has a collector-emitter saturation voltage of 1.5V at 25°C, a power dissipation limit of 136W at 25°C, and operates with a junction temperature range of -40°C to +175°C. Thermal resistance from junction to case is 1.10°C/W for the IGBT and 1.62°C/W for the diode. The device is RoHS compliant and supports high-speed switching with low switching losses. It meets AEC-Q200 qualification standards.
The RGW40TS65D is a fast switching speed IGBT, suitable for PFC, solar inverter, UPS, welding and IH. The RGTV/RGW series is a highly efficient series that is optimized the trade-off relationship between conduction loss and switching speed. In addition, optimizing the internal design allowed to achieve smooth switching characteristics that decrease voltage overshoot. It contributes to reduce the number of parts required along with design load.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | RGW40TS65D |
| Product Name | High-Speed Fast Switching Type, 650V 20A, FRD Built-in, TO-247N, Field Stop Trench IGBT |
| TJ | -55 to 175 C (-67 to 347 F) |
