RGW40TK65D is a 650V, 16A field stop trench IGBT with a built-in fast recovery diode, housed in a TO-3PFM package, designed for PFC, solar inverter, UPS, and induction heating applications. It has a maximum collector-emitter saturation voltage of 1.9V at 25°C and 1.85V at 175°C, with a power dissipation of 61W at 25°C and 30W at 100°C. The junction operating temperature ranges from -40°C to +175°C, and thermal resistance from junction to case is 2.44°C/W for the IGBT and 2.79°C/W for the diode. The device is RoHS compliant and features low switching losses and soft switching characteristics.
RGW40TK65D is a high speed switching IGBT, suitable for PFC, Solar Inverter, UPS, Welding, IH applications.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | RGW40TK65D |
| Product Name | High-Speed Fast Switching Type, 650V 16A, FRD Built-in, TO-3PFM, Field Stop Trench IGBT |
| TJ | -55 to 175 C (-67 to 347 F) |
