The RGW00TS65DHRC11 is a 650V, 50A field stop trench IGBT with a built-in fast recovery diode, packaged in a TO-247N case. It has a collector-emitter saturation voltage of 1.5V (typical) at 25°C and a maximum power dissipation of 254W at 25°C case temperature. The device is AEC-Q101 qualified and RoHS compliant, suitable for automotive and industrial applications such as on- and off-board chargers, DC-DC converters, PFC, and inverters. Thermal resistance from junction to case is 0.59°C/W for the IGBT and 1.17°C/W for the diode. Operating junction temperature ranges from -40°C to +175°C.
RGW00TS65DHR is a IGBT with low collector - emitter saturation voltage, suitable for On & Off Board Chagers, DC-DC Converters, PFC, Industrial Inverter. This product complies AEC-Q101 qualification. The RGW series features high-speed switching, contributing to higher efficiency of applications.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | RGW00TS65DHR |
| Product Name | High-Speed Fast Switching Type, 650V 50A, FRD Built-in, TO-247N, Field Stop Trench IGBT for Automotive |
| PD | 254000 milliwatts |
