RGW00TS65D is a 650V, 50A field stop trench IGBT with a built-in fast recovery diode, housed in a TO-247N package. It has a collector-emitter saturation voltage of 1.5V (typical) at 25°C and 1.85V at 175°C, with a maximum power dissipation of 254W at 25°C and 127W at 100°C. The device supports an operating junction temperature range of -40°C to +175°C, features low switching losses, and complies with RoHS. Thermal resistance is 0.59°C/W for the IGBT junction-to-case and 1.17°C/W for the diode junction-to-case. It meets AEC-Q200 and UL 94 V-0 standards.
RGW00TS65D is a high speed switching IGBT, suitable for PFC, Solar Inverter, UPS, Welding, IH applications.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | RGW00TS65D |
| Product Name | High-Speed Fast Switching Type, 650V 50A, FRD Built-in, TO-247N, Field Stop Trench IGBT |
| TJ | -55 to 175 C (-67 to 347 F) |
